FTD8005 no.7603-1/4 features ? ultralow on-resistance. ? 2.5v drive. ? mounting height 1.1mm. ? composite type, facilitating high-density mounting. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7603 FTD8005 package dimensions unit : mm 2155a [FTD8005] 41504 ts im ta-100409 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. n-channel silicon mosfet load switching applications 1 : drain1 2 : source1 3 : source1 4 : gate1 5 : gate2 6 : source2 7 : source2 8 : drain2 sanyo : tssop8 6.4 3.0 0.425 0.65 4.5 0.95 (0.95) 0.5 0.125 85 14 0.25 1.0 0.1 specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 20 v gate-to-source voltage v gss 12 v drain current (dc) i d 6a drain current (pulse) i dp pw 10 m s, duty cycle 1% 40 a allowable power dissipation p d mounted on a ceramic board (1000mm 2 5 0.8mm)1unit 1.1 w total dissipation p t mounted on a ceramic board (1000mm 2 5 0.8mm) 1.5 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 20 v zero-gate voltage drain current i dss v ds =20v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 8v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.5 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =6a 9.6 16 s marking : d8005 continued on next page.
FTD8005 no.7603-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit static drain-to-source on-state resistance r ds (on)1 i d =6a, v gs =4v 14 19 m w r ds (on)2 i d =3a, v gs =2.5v 18 26 m w input capacitance ciss v ds =10v, f=1mhz 1980 pf output capacitance coss v ds =10v, f=1mhz 290 pf reverse transfer capacitance crss v ds =10v, f=1mhz 280 pf turn-on delay time t d (on) see specified test circuit 25 ns rise time t r see specified test circuit 240 ns turn-off delay time t d (off) see specified test circuit 205 ns fall time t f see specified test circuit 172 ns total gate charge qg v ds =10v, v gs =4v, i d =6a 28 nc gate-to-source charge qgs v ds =10v, v gs =4v, i d =6a 4 nc gate-to-drain miller charge qgd v ds =10v, v gs =4v, i d =6a 7.5 nc diode forward voltage v sd i s =6a, v gs =0 0.81 1.2 v switching time test circuit electrical connection d1 s1 s1 g1 d2 s2 s2 g2 pw=10 m s d.c. 1% 4v 0v v in p. g 50 w g s FTD8005 i d =6a r l =1.67 w v dd =10v v out v in d r ds (on) -- ta ambient temperature, ta -- c 50 45 40 35 30 25 20 15 10 5 175 150 125 100 75 50 25 0 --25 --50 --75 0 r ds (on) -- v gs gate-to-source voltage, v gs -- v 50 45 40 35 30 25 20 15 10 5 0 10 8 6 4 2 0 0 i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v 8 7 6 5 4 3 2 1 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 i d -- v ds drain current, i d -- a drain-to-source voltage, v ds -- v 6 5 4 3 2 1 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 it06311 it06313 it06312 it06314 4.0v v gs =1.0v 1.5v 2.0v 3.0v 2.5v v ds =10v ta=25 c --25 c 75 c i d =3a 6a ta=25 c i d =3a, v gs =2.5v i d =6a, v gs =4v static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w
FTD8005 no.7603-3/4 0 4 8 12 16 20 2 6 10 14 18 100 1000 10000 7 5 3 2 7 5 3 2 p d -- ta p d -- p d allowable power dissipation, p d -- w ambient temperature, ta -- c 1.6 1.2 1.1 1.0 0.8 0.6 0.4 0.2 0 1.5 1.2 1.1 0.8 0.4 0 0 0 0.2 0.4 0.6 0.8 1.0 1.1 1.2 20 40 60 80 100 120 140 160 a s o drain current, i d -- a allowable power dissipation(fet1), p d -- w drain-to-source voltage, v ds -- v allowable power dissipation(fet2), p d -- w sw time -- i d switching time, sw time -- ns drain current, i d -- a 0.1 1.0 10 23 57 23 57 t f 7 5 3 7 5 3 7 5 3 7 5 3 0.01 0.1 1.0 10 100 2 2 2 2 ciss, coss, crss -- v ds ciss, coss, crss -- pf drain-to-source voltage, v ds -- v v gs -- qg gate-to-source voltage, v gs -- v total gate charge, qg -- nc 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 30 25 20 15 10 5 0 ciss coss crss it06317 it06319 it06321 diode forward voltage, v sd -- v ? y fs ? -- i d forward transfer admittance, ? y fs ? -- s drain current, i d -- a forward current, i f -- a i f -- v sd it06315 it06316 it06318 it06320 it06322 3 3 7 5 3 0.10 1.0 10 2 7 5 2 2 23 57 0.01 0.1 1.0 23 57 23 57 10 v ds =10v 75 c ta=--25 c 25 c 0.01 0.1 7 5 3 2 1.0 7 5 3 2 10 7 5 3 2 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 25 c ta=75 c --25 c v gs =0 f=1mhz v ds =10v i d =6a 10 100 1000 3 5 2 2 7 7 5 3 t d (on) t r t d (off) v dd =10v v gs =4v 1.0 23 57 10 0.1 23 57 0.01 23 57 23 5 dc operation 100ms 10ms 1ms < 10 m s 100 m s operation in this area is limited by r ds (on) i dp =40a i d =6a total dissipation 1unit mounted on a ceramic board(1000mm 2 5 0.8mm) mounted on a ceramic board(1000mm 2 5 0.8mm) ta=25 c single pulse mounted on a ceramic board(1000mm 2 5 0.8mm) 1unit
FTD8005 no.7603-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of april, 2004. specifications and information herein are subject to change without notice. ps
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